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From Relaxed GeSi Buffers to Field Effect Transistors: Current Status and Future Prospects

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nanoHUB-U Nanoscale Transistors L1.4: The Transistor - The MOSFET: A Barrier-Controlled Device

Author affiliations. Abstract High quality relaxed silicon-germanium graded buffers are an important platform for monolithic integration of high speed heterostructure field-effect transistors and III-V-based optoelectronics onto silicon substrates. These results demonstrate the dramatic increases in microelectronics performance and functionality that can be obtained through use of the relaxed SiGe integration platform. The evolution of field threading dislocation density TDD with growth temperature in the on-axis samples indicates that dislocation nucleation and glide kinetics together control dislocation density in graded buffers.


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The TDD of samples grown on offcut substrates exhibits a more complicated temperature dependence, due to their reduced tendency towards dislocation pile-up formation at low temperature and dislocation reduction reactions at high temperature. Finally, by evaluating field threading dislocation density and dislocation pile-up density in a wide variety of SiGe graded buffers, a correlation between dislocation pile-up formation and increases in field threading dislocation density emerges.

Description Thesis Ph. Date issued Department Massachusetts Institute of Technology.

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Publisher Massachusetts Institute of Technology. Keywords Materials Science and Engineering. Collections Materials Science and Engineering - Ph. Materials Science and Engineering - Ph.

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