From Relaxed GeSi Buffers to Field Effect Transistors: Current Status and Future Prospects
To find out more, see our Privacy and Cookies policy. Close this notification. Semiconductor Science and Technology. Download Article PDF.
Download Strained Si Heterostructure Field Effect Devices (Material Science And Engineering) 2007
Share this article. Article information.
Author affiliations. Abstract High quality relaxed silicon-germanium graded buffers are an important platform for monolithic integration of high speed heterostructure field-effect transistors and III-V-based optoelectronics onto silicon substrates. These results demonstrate the dramatic increases in microelectronics performance and functionality that can be obtained through use of the relaxed SiGe integration platform. The evolution of field threading dislocation density TDD with growth temperature in the on-axis samples indicates that dislocation nucleation and glide kinetics together control dislocation density in graded buffers.
- From 0 to 130 Properties in 3.5 Years?
- Dragon Keepers #3: The Dragon in the Library.
- Diritto Civile (Italian Edition).
- The Body.
- Feminism/Postmodernism (Thinking Gender);
- Learn more about Strained Silicon;
The TDD of samples grown on offcut substrates exhibits a more complicated temperature dependence, due to their reduced tendency towards dislocation pile-up formation at low temperature and dislocation reduction reactions at high temperature. Finally, by evaluating field threading dislocation density and dislocation pile-up density in a wide variety of SiGe graded buffers, a correlation between dislocation pile-up formation and increases in field threading dislocation density emerges.
Description Thesis Ph. Date issued Department Massachusetts Institute of Technology.https://riobrowpetat.tk
Strained-Si Heterostructure Field Effect Devices - PDF Free Download
Publisher Massachusetts Institute of Technology. Keywords Materials Science and Engineering. Collections Materials Science and Engineering - Ph. Materials Science and Engineering - Ph.
Show Statistical Information.